Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O<sub>2</sub>-Based Ferroelectric NVDRAM-Reference-Cited by-同舟云学术

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Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O₂-Based Ferroelectric NVDRAM

Published:2024-04-14 Issue: Volume: Page:1-8
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Ettisserry Devanarayanan¹,Visconti Angelo¹,Bonanomi Mauro¹,Pazzocco Riccardo¹,Locatelli Andrea¹,Sebastiani Alessandro¹,Chavan Ashonita¹,Hollander Matthew¹,Servalli Giorgio¹,Calderoni Alessandro¹,Ramaswamy Nirmal¹

Affiliation:

1. Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529336.pdf?arnumber=10529336

Reference15 articles.

1. Key challenges and directional paths of memory technology for AI/HPC computing;Kim;short course, IEDM, San Francisco,2023

2. NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

3. Ferroelectricity in hafnium oxide thin films

4. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

5. Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials Engineering for High Performance Ferroelectric Memory;2024 IEEE International Memory Workshop (IMW);2024-05-12

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