Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories-Reference-Cited by-同舟云学术

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Muller J.¹,Boscke T. S.²,Muller S.³,Yurchuk E.³,Polakowski P.¹,Paul J.¹,Martin D.³,Schenk T.³,Khullar K.³,Kersch A.⁴,Weinreich W.¹,Riedel S.¹,Seidel K.¹,Kumar A.⁵,Arruda T. M.⁵,Kalinin S. V.⁵,Schlosser T.⁶,Boschke R.⁶,van Bentum R.⁶,Schroder U.³,Mikolajick T.³

Affiliation:

1. Fraunhofer IPMS-CNT, Dresden, Germany

2. Bosch Solar Energy, Erfurt, Germany

3. NaMLab gGMBH, Dresden, Germany

4. FH-München, München, Germany

5. ORNL, Oak Ridge, TN, U.S.A.

6. GLOBALFOUNDRIES, Dresden, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724605.pdf?arnumber=6724605

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