13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V-Reference-Cited by-同舟云学术

13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

Published:2019-02 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Jain Pulkit,Arslan Umut,Sekhar Meenakshi,Lin Blake C.,Wei Liqiong,Sahu Tanaya,Alzate-vinasco Juan,Vangapaty Ajay,Meterelliyoz Mesut,Strutt Nathan,Chen Albert B.,Hentges Patrick,Quintero Pedro A.,Connor Chris,Golonzka Oleg,Fischer Kevin,Hamzaoglu Fatih

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8656625/8662285/08662393.pdf?arnumber=8662393

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