EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage-Reference-Cited by-同舟云学术

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EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage

Published:2024-07 Issue:7 Volume:59 Page:2081-2092
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Levy Akash¹^ORCID,Upton Luke R.¹^ORCID,Scott Michael D.¹,Rich Dennis¹^ORCID,Khwa Win-San²,Chih Yu-Der²,Chang Meng-Fan²,Mitra Subhasish¹^ORCID,Murmann Boris¹^ORCID,Raina Priyanka¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

2. TSMC, Hsinchu, Taiwan

Funder

AI Chip Center for Emerging Smart Systems (ACCESS), Hong Kong, SAR

Defense Advanced Research Projects Agency (DARPA) 3DSoC Project

NSF FuSe-TG under

NSF Graduate Research Fellowship Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/4/10575937/10504791-aam.pdf

Reference19 articles.

1. Metal–Oxide RRAM

2. RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays

3. Relaxation Effect in RRAM Arrays: Demonstration and Characteristics

4. A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding

5. EMBER: A 100 MHz, 0.86 mm², Multiple-Bits-per-Cell RRAM Macro in 40 nm CMOS with Compact Peripherals and 1.0 pJ/bit Read Circuitry

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