Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics

Author:

Ip Nathan1,Nejadsadeghi Nima1,Fonseca Carlos1,Kohama Norifumi2,Motoda Kimio2

Affiliation:

1. Tokyo Electron America, Inc.,Austin,Texas,United States

2. Tokyo Electron Kyushu Limited,Koshi,Kumamoto,Japan

Publisher

IEEE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mechanical modeling and analysis of direct wafer bonding technology considering the effect of impurity particles;Composite Structures;2024-11

2. Method to evaluate the adhesion distribution on wafers;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

3. Measurement of the bonding energy via non-planar direct bonding;Journal of Applied Physics;2023-06-01

4. Simulation of device structure impacts on bonding wave and strain in Wafer-to-Wafer Cu-Cu Hybrid Bonding;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. Distortion Simulation for Direct Wafer-to-Wafer Bonding Process;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

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