Distortion Simulation for Direct Wafer-to-Wafer Bonding Process
Author:
Affiliation:
1. Tokyo Electron America, Inc,Austin,Texas,United States
2. Tokyo Electron Kyushu Limited,Koshi,Kumamoto,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195709.pdf?arnumber=10195709
Reference8 articles.
1. Enabling layer transfer and back-side power delivery network applications by wafer bonding and scanner correction optimizations
2. Using intra-field high order correction to achieve overlay requirement beyond sub-40nm node;huang;Proceedings of SPIE,2009
3. Direct silicon bonding dynamics: A coupled fluid/structure analysis
4. Adhesion Energy and Bonding Wave Velocity Measurements
5. Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics
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