New Cu “Bulge-Out” Mechanism Supporting SubMicron Scaling of Hybrid Wafer-to-Wafer Bonding-Reference-Cited by-同舟云学术

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New Cu “Bulge-Out” Mechanism Supporting SubMicron Scaling of Hybrid Wafer-to-Wafer Bonding

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

De Messemaeker Joke¹,Witters Liesbeth¹,Zhang Boyao¹,Tsau Yan Wen¹,Fodor Ferenc¹,De Vos Joeri¹,Beyer Gerald¹,Croes Kristof¹,Beyne Eric¹

Affiliation:

1. imec,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195731.pdf?arnumber=10195731

Reference9 articles.

1. The Influence of Cu Microstructure on Thermal Budget in Hybrid Bonding

2. Thermomechanical aspects of wafer-to-wafer copper-dielectric hybrid bonding for 3D integrated circuits;orkut okudur;Wafer Bonding Conference,2017

3. Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

4. Optimization of Cu/SiCN CMP process for surface preparation targeting W2W hybrid bonding;dewilde;Wafer Bond,2022

5. 3D SoC integration, beyond 2.5D chiplets

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced thermal expansion with nanocrystalline Cu in SiO2 vias for hybrid bonding;Applied Surface Science;2024-11

2. In-situ measurement of thermal expansion in Cu/SiO2 hybrid structures using atomic force microscopy at elevated temperatures;Applied Surface Science;2024-07

3. Process Development and Performance Benefits of 0.64-0.36 μm Pitch Hybrid Bonding on Intel Process;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

5. Simulation of Bulge-Out Mechanism Enabling Sub-0.5 μm Scaling of Hybrid Wafer-to-Wafer Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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