Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding-Reference-Cited by-同舟云学术

Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

Published:2022-11 Issue: Volume:138 Page:114716
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Tsau Yan Wen,De Messemaeker Joke,Salahouelhadj Abdellah,Gonzalez Mario,Witters Liesbeth,Zhang Boyao,Seefeldt Marc,Beyne Eric,De Wolf Ingrid

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. 2021 IEEE IEDM. 3D SoC Integration, Beyond 2.5D Chiplets;Beyne,2021

2. Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding;Kim,2020

3. Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology;Beyne,2017

4. Extraction of the appropriate material property for realistic modeling of through-silicon-vias using μ-Raman spectroscopy;Okoro,2008

5. Flow stress of FCC polycrystals with application to OFHC Cu;Nemat-Nasser;Acta Mater.,1998

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