Measurement of Thermal Stress by X-ray Nano-Diffraction in (111)-Oriented Nanotwinned Cu Bumps for Cu/SiO2 Hybrid Joints

Author:

Hsu Wei-You1ORCID,Yang Shih-Chi1,Lin You-Yi1ORCID,Hsieh Wan-Zhen2,Tu King-Ning34,Chiu Wei-Lan5ORCID,Chang Hsiang-Hung5,Chiang Ching-Yu2ORCID,Chen Chih1ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

3. Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong

4. Department of Electrical Engineering, City University of Hong Kong, Hong Kong

5. Electronics and Optoelectronics System Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 30010, Taiwan

Abstract

X-ray nanodiffraction was used to measure the thermal stress of 10 µm nanotwinned Cu bumps in Cu/SiO2 hybrid structures at −55 °C, 27 °C, 100 °C, 150 °C, and 200 °C. Bonding can be achieved without externally applied compression. The X-ray beam size is about 100 nm in diameter. The Cu bump is dominated by (111) oriented nano-twins. Before the hybrid bonding, the thermal stress in Cu bumps is compressive and remains compressive after bonding. The average stress in the bonded Cu joint at 200 °C is as large as −169.1 MPa. In addition, using the strain data measured at various temperatures, one can calculate the effective thermal expansion coefficient (CTE) for the 10 µm Cu bumps confined by the SiO2 dielectrics. This study reports a useful approach on measuring the strain and stress in oriented metal bumps confined by SiO2 dielectrics. The results also provide a deeper understanding on the mechanism of hybrid bonding without externally applied compression.

Funder

National Science and Technology Council, Taiwan

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

Reference47 articles.

1. Oi, K., Otake, S., Shimizu, N., Watanabe, S., Kunimoto, Y., Kurihara, T., Koyama, T., Tanaka, M., Aryasomayajula, L., and Kutlu, Z. (2014, January 27–30). Development of New 2.5D Package with Novel Integrated Organic Interposer Substrate with Ultra-Fine Wiring and High Density Bumps. Proceedings of the 2014 IEEE 64th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA.

2. Juang, J., Lu, S., Zhan, C., Su-Ching, C., Fan, C., Peng, J., and Chen, T. (2010, January 20–22). Development of 30 Um Pitch Cu/Ni/SnAg Micro-Bump-Bonded Chip-on-Chip (COC) Interconnects. Proceedings of the 2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference, Taipei, Taiwan.

3. Juang, J.Y., Huang, S.Y., Zhan, C.J., Lin, Y.M., Huang, Y.W., Fan, C.W., Chung, S.C., Chen, S.M., Peng, J.S., and Lu, Y.L. (2013, January 28–31). Effect of Metal Finishing Fabricated by Electro and Electroless Plating Process on Reliability Performance of 30 μm-Pitch Solder Micro Bump Interconnection. Proceedings of the 2013 IEEE 63rd Electronic Components and Technology Conference, Las Vegas, NV, USA.

4. Kim, S.W., Fodor, F., Heylen, N., Iacovo, S., DeVos, J., Miller, A., Beyer, G., and Beyne, E. (2020, January 3–30). Novel Cu/SiCN Surface Topography Control for 1 Μm Pitch Hybrid Wafer-to-Wafer Bonding. Proceedings of the 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA.

5. Beyne, E., Kim, S.W., Peng, L., Heylen, N., DeMessemaeker, J., Okudur, O.O., Phommahaxay, A., Kim, T.G., Stucchi, M., and Velenis, D. (2018, January 1–5). Scalable, Sub 2μm Pitch, Cu/SiCN to Cu/SiCN Hybrid Wafer-to-Wafer Bonding Technology. Proceedings of the Technical Digest—International Electron Devices Meeting, IEDM, San Francisco, CA, USA.

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