Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology-Reference-Cited by-同舟云学术

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Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Electron Devices Meeting (IEDM)
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Author:

Beyne Eric,Kim Soon-Wook,Peng Lan,Heylen Nancy,De Messemaeker Joke,Okudur Oguzhan Orkut,Phommahaxay Alain,Kim Tae-Gon,Stucchi Michele,Velenis Dimitrios,Miller Andy,Beyer Gerald

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268486.pdf?arnumber=8268486

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ measurement of thermal expansion in Cu/SiO2 hybrid structures using atomic force microscopy at elevated temperatures;Applied Surface Science;2024-07

2. Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps;ECS Journal of Solid State Science and Technology;2024-07-01

3. Exploring Bonding Mechanism of SiCN for Hybrid Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. Low Temperature Cu/SiO₂ Hybrid Bonding with Protruding Copper Pads;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

5. Cu nanowire fine-pitch joints for next gen heterogeneous chiplet integration;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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