C2W Hybrid Bonding Interconnect Technology for Higher Density and Better Thermal Dissipation of High Bandwidth Memory
Author:
Affiliation:
1. SK hynix Inc.,Ichon-si,Rebublic of Korea
2. SK hynix Inc.,Seoul-si,Republic of Korea
3. SK hynix Inc.,Dongtan-si,Rebublic of Korea
4. SK hynix Inc.,Hanam-si,Rebublic of Korea
5. SK hynix Inc.,Suwon-si,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195713.pdf?arnumber=10195713
Reference5 articles.
1. Thermal and Electrical Performance of Direct Bonding Interconnect technology for 2.5D and 3D Integrated Circuits;agrawal;2017 IEEE 67th Electron Components Technol Conf,0
2. Scaling Package Interconnects Below 20um Pitch with Hybrid Bonding;gao;2018 IEEE 68th Electronic Components and Technology Conference,0
3. SoIC for Low-Temerature, Multi-Layer 3D Memory Integration;chen;2020 IEEE 70th Electronic Components and Technology Conference (ECTC),0
4. An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, alignment and characterization;di cioccio;Journal of The Electrochemical Society,0
5. A Study on Memory Stack Process by Hybrid Copper Bonding (HCB) Technology
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