C2W Hybrid Bonding Interconnect Technology for Higher Density and Better Thermal Dissipation of High Bandwidth Memory

Author:

Kim Kibum1,Lim Sanghyuk2,Jung Dongwook1,Choi Jeongyun2,Na Song.3,Yeom Jaehvun.1,Lee Miseon4,Kim Jongyeon5,Kwon Jongoh3,Moon Ki-Il2,Lee Gyuje2,Lee Kangwook5

Affiliation:

1. SK hynix Inc.,Ichon-si,Rebublic of Korea

2. SK hynix Inc.,Seoul-si,Republic of Korea

3. SK hynix Inc.,Dongtan-si,Rebublic of Korea

4. SK hynix Inc.,Hanam-si,Rebublic of Korea

5. SK hynix Inc.,Suwon-si,Republic of Korea

Publisher

IEEE

Reference5 articles.

1. Thermal and Electrical Performance of Direct Bonding Interconnect technology for 2.5D and 3D Integrated Circuits;agrawal;2017 IEEE 67th Electron Components Technol Conf,0

2. Scaling Package Interconnects Below 20um Pitch with Hybrid Bonding;gao;2018 IEEE 68th Electronic Components and Technology Conference,0

3. SoIC for Low-Temerature, Multi-Layer 3D Memory Integration;chen;2020 IEEE 70th Electronic Components and Technology Conference (ECTC),0

4. An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, alignment and characterization;di cioccio;Journal of The Electrochemical Society,0

5. A Study on Memory Stack Process by Hybrid Copper Bonding (HCB) Technology

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4. State of the Art of Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03

5. Cu-Cu Hybrid Bonding;Flip Chip, Hybrid Bonding, Fan-In, and Fan-Out Technology;2024

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