A Study on Memory Stack Process by Hybrid Copper Bonding (HCB) Technology-Reference-Cited by-同舟云学术

A Study on Memory Stack Process by Hybrid Copper Bonding (HCB) Technology

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
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Author:

Lee Sanghoon¹,Jee Youngkun¹,Park Sangcheon¹,Lee Soohwan¹,Hwang Bohee¹,Jo Gyeongjae¹,Lee Chungsun¹,Park Jumyong¹,Jang Aeni¹,Jung HyunChul¹,Kim Ilhwan¹,Kang Dongwoo¹,Baek Seungduk¹,Kim Dae-Woo¹,Kang Unbyung¹

Affiliation:

1. Test & System Package (TSP) Samsung Electronics Co., Ltd,Chungcheongnam-Do,South Korea,21086

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816504.pdf?arnumber=9816504

Reference17 articles.

1. Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding

2. Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology

3. Cu Microstructure of High Density Cu Hybrid Bonding Interconnection

4. A novel role for SiCN to suppress H2O outgas from TEOS oxide films in hybrid bonding

5. Self-Assembly Process for 3D Die-to-Wafer using Direct Bonding: A Step Forward Toward Process Automatisation

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