III-Nitride Nanostructures for High Efficiency Micro-LEDs and Ultraviolet Optoelectronics
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA
Funder
Army Research Office
National Science Foundation
NS Nanotech, Inc.
Natural Sciences and Engineering Research Council of Canada
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics
Link
https://ieeexplore.ieee.org/ielam/3/9843922/9714402-aam.pdf
Reference222 articles.
1. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures
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3. Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy
4. Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity
5. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
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