Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm-Reference-Cited by-同舟云学术

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Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm

Published:2024-04 Issue:4 Volume:45 Page:641-644
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Yibo¹^ORCID,Wang Guobin²,Feng Feng¹^ORCID,Li Zichun¹^ORCID,Xu Ke²,Kwok Hoi Sing¹,Liu Zhaojun³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, SAR, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu Institute of Advanced Semiconductors, Suzhou, Jiangsu, China

3. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China

Funder

Fundamental and Applied Fundamental Research Fund of Guangdong Province

Shenzhen Peacock Team

Shenzhen Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10459218.pdf?arnumber=10459218

Reference28 articles.

1. AlGaN Ultraviolet Micro-LEDs

2. Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

3. III-Nitride Nanostructures for High Efficiency Micro-LEDs and Ultraviolet Optoelectronics

4. 275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

5. High‐Resolution 960 × 540 and 1920 × 1080 UV Micro Light‐Emitting Diode Displays with the Application of Maskless Photolithography

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