Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aace97/pdf
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1. Correlation between optical and electrical properties of Mg-doped AlN epilayers
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. Hole conductivity and compensation in epitaxial GaN:Mg layers
4. High Mg effective incorporation in Al-rich Al x Ga1 - xN by periodic repetition of ultimate V/III ratio conditions
5. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
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