Author:
Zheng Tongchang,Lin Wei,Cai Duanjun,Yang Weihuang,Jiang Wei,Chen Hangyang,Li Jinchai,Li Shuping,Kang Junyong
Abstract
Abstract
According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al
x
Ga1 – x
N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on Al
x
Ga1 – x
N surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials. On the basis of these special features, we proposed a modified surface engineering technique that applies periodical interruptions under an ultimate V/III ratio condition (extremely N-rich), to enhance Mg effective incorporation. By optimizing the interruption conditions (2 nm interruption interval with 2 s interruption time), the enhancement ratio can be up to about 5 in the Al0.99Ga0.01N epilayer.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference31 articles.
1. Nakarmi ML, Nepal N, Lin JY, Jiang HX: Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys. Appl Phys Lett 2009, 94: 9.
2. Yan Y, Li J, Wei SH, Al-Jassim MMA: Possible approach to overcome the doping asymmetry in wideband gap semiconductors. Phys Rev Lett 2007, 98(13):135506.
3. Yan Y, Zhang SB, Pantelides ST: Control of doping by impurity chemical potentials: predictions for p-type ZnO. Phys Rev Lett 2001, 86(25):5723–5726. 10.1103/PhysRevLett.86.5723
4. Nam KB, Nakarmi ML, Li J, Lin JY, Jiang HX: Mg acceptor level in AlN probed by deep ultraviolet photoluminescence. Appl Phys Lett 2003, 83(5):878–880. 10.1063/1.1594833
5. Li JC, Yang W, Li S, Chen H, Liu D, Kang J: Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-delta-codoped AlxGa1-xN/AlyGa1-yN superlattices. Appl Phys Lett 2009, 95: 15.
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