Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures
Author:
Affiliation:
1. Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5009937
Reference38 articles.
1. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
2. High Mg effective incorporation in Al-rich Al x Ga1 - xN by periodic repetition of ultimate V/III ratio conditions
3. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
4. Hole conductivity and compensation in epitaxial GaN:Mg layers
5. Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy
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