A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing-Reference-Cited by-同舟云学术

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A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Lee Y.-J.,Cho T.-C.,Kao K.-H.,Sung P.-J.,Hsueh F.-K.,Huang P.-C.,Wu C.-T.,Hsu S.-H.,Huang W. -H.,Chen H.-C.,Li Y.,Current M. I.,Hengstebeck B.,Marino J.,Buyuklimanli T.,Shieh J.-M.,Chao T.-S.,Wu W.-F.,Yeh W.-K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047158.pdf?arnumber=7047158

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF, harmonic distortion and linearity analysis of core-shell junctionless-FET using NQS small signal model;Physica Scripta;2024-07-09

2. Oppositely-Doped Core-Shell Junctionless Nanowire FET: Design and Investigation;ECS Journal of Solid State Science and Technology;2024-01-01

3. Investigation of Core–Shell Junctionless Gate-Stack DG-FET in Low-Power Applications Using Charge-Based Modeling;Journal of Electronic Materials;2023-10-14

4. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

5. Analytical Modeling of Core–Shell Junctionless RADFET dosimeter of Improved Sensitivity;Silicon;2022-01-22

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