Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Gladstone, D. J. Chin, L. M. and Holmes-Siedle, A. 1991 “MOSFET radiation detectors used as patient radiation dose monitors during radiotherapy,” in Proc. 33rd. Annu. Meet. Amer. Assoc. Phys. Med., San Francisco, CA, USA
2. Schwank JR et al (2008) Radiation Effects in MOS Oxides. IEEE Trans Nucl Sci 55(4):1833–1853. https://doi.org/10.1109/TNS.2008.2001040
3. Esqueda, I. S. Barnaby, H. J. Holbert, K. E. Mamouni and F. E. Schrimpf, R. D. 2009 "Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors," 2009 European Conference on Radiation and Its Effects on Components and Systems, pp. 2-6https://doi.org/10.1109/RADECS.2009.5994543
4. Alcalde Bessia F et al (2020) Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application. IEEE Trans Nucl Sci 67(10):2217–2223. https://doi.org/10.1109/TNS.2019.2945040
5. Holmes-Siedle A (1974) The space-charge dosimeter. Nucl Instrum Methods 121:169–179
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