Abstract
Abstract
This paper deals with the performance analysis of Core-Shell (C-S) Junctionless (JL) FET structure in the RF domain application. The analysis begins with the non-quasi static (NQS) small signal model representation and from there the extraction of RF-parameters; and there after the harmonic distortions, linearity FOMs and Y-parameter are analyzed in detail. The device is investigated based on the variations of core/shell-thicknesses and shell-dopant concentrations. Y-parameters are evaluated from the NQS small signal model. In the RF domain analysis, the parameters such as,
C
gs
,
C
gd
,
R
gs
,
R
gd
,
f
T
and
τ
m
are assessed to determine its RF merits. Using the two-port equivalent model, the Y-parameters (
Y
11
, Y
12
, Y
21
, Y
22
) are evaluated and investigated. The second and third order harmonic distortions (
HD
2
, HD
3
) are calculated using IFM method and studied in detail. In addition to that, second, third harmonic intercept voltages (
VIP
2
,
VIP
3
) and third order intermodulation distortion (
IMD
3
) are also assessed for its linearity performances in domain specific applications. The proposed device is designed using the
Silvaco ATLAS TCAD
. The device is calibrated with the experimental data that shows a close match between the two. The proposed device is found to exhibit good linearity and very low harmonic distortion behavior by modulating the shell-doping and thickness.