A Simulation Comparison between Junctionless and Inversion-Mode MuGFETs

Abstract

A new type of multigate MOSFET, called the junctionless nanowire transistor (JNT), has recently been proposed. It avoids junction formation problem and can be used to make very short-channel devices. Here, we compare the properties and performances of junctionless nanowire transistors with those of with Π-gate inversion-mode (IM) devices. The performances of silicon JNTs and IM transistors are evaluated in terms of short-channel effects, current drive, and gate capacitance. Junctionless devices are shown to have smaller short-channel effects than inversion-mode transistors with junctions. Comparison of carrier transport in the channel is made between junctionless nanowires and inversion-mode multigate field-effect transistors, and the benefits/drawbacks of bulk transport vs. surface transport are addressed.