Investigation of Core–Shell Junctionless Gate-Stack DG-FET in Low-Power Applications Using Charge-Based Modeling
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11664-023-10742-x.pdf
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3. Y. Xiao, B. Zhang, H. Lou, L. Zhang, and X. Lin, A compact model of subthreshold current with source/drain depletion effect for the short-channel junctionless cylindrical surrounding-gate mosfets. IEEE Trans. Electron Devices 63, 2176 (2016).
4. J.-P. Colinge, A. Kranti, R. Yan, I. Ferain, N.D. Akhavan, P. Razavi, C.-W. Lee, R. Yu, and C. Colinge, A simulation comparison between junctionless and inversion-mode mugfets. ECS Trans. 35, 63 (2011).
5. Y. Xiao, X. Lin, H. Lou, B. Zhang, L. Zhang, and M. Chan, A short channel double-gate junctionless transistor model including the dynamic channel boundary effect. IEEE Trans. Electron Devices 63, 4661 (2016).
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