Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si-Reference-Cited by-同舟云学术

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Toward High Performance SiGe Channel CMOS: Design of High Electron Mobility in SiGe nFinFETs Outperforming Si

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lee C.H.,Hashemi P.,Guo D.,Narayanan V.,Loubet N.,Jagannathan H.,Southwick R.G.,Mochizuki S.,Li J.,Miao X.,Wang M.,Bao R.,Ok I.,Ando T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614581.pdf?arnumber=8614581

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond;IEEE Transactions on Electron Devices;2024-03

2. A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping;Journal of Materials Science: Materials in Electronics;2024-02

3. Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration;IEEE Transactions on Electron Devices;2023-12

4. Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System;Nanomaterials;2023-05-18

5. NH₃ PDA Temperature-Impact on Low-Frequency Noise Behavior of Si_0.7Ge_0.3 pFinFETs;IEEE Transactions on Electron Devices;2022-12

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