Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs-Reference-Cited by-同舟云学术

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Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Published:2021 Issue: Volume:2 Page:265-276
ISSN:2644-1314
Container-title:IEEE Open Journal of Power Electronics
language:
Short-container-title:IEEE Open J. Power Electron.

Author:

Yang Juefei^ORCID,Jahdi Saeed^ORCID,Stark Bernard^ORCID,Alatise Olayiwola^ORCID,Ortiz-Gonzalez Jose^ORCID,Mellor Phil^ORCID

Funder

U.K. Supergen ORE Hub

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Medicine

Link

http://xplorestaging.ieee.org/ielx7/8782709/9343742/09400715.pdf?arnumber=9400715

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET;IEEE Transactions on Electron Devices;2024-08

2. Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse;Microelectronics Reliability;2024-04

3. High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs;IEEE Open Journal of Industry Applications;2024

4. Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study;Transactions on Electrical and Electronic Materials;2023-10-04

5. Investigation on Performance for Silicon and GaAs Channel of Double-Gate MOSFETs;Lecture Notes in Electrical Engineering;2023-09-03

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