High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs-Reference-Cited by-同舟云学术

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High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs

Published:2024 Issue: Volume:5 Page:235-252
ISSN:2644-1241
Container-title:IEEE Open Journal of Industry Applications
language:
Short-container-title:IEEE Open J. Ind. Applicat.

Author:

Hosseinzadehlish Mana¹^ORCID,Jahdi Saeed¹^ORCID,Yuan Xibo¹^ORCID,Ortiz-Gonzalez Jose²^ORCID,Alatise Olayiwola²^ORCID

Affiliation:

1. Electrical Energy Management Group, School of Electrical, Electronic and Mechanical Engineering, University of Bristol, Bristol, U.K.

2. Power Electronics Applications and Technology in Energy Research Group, School of Engineering, University of Warwick, Coventry, U.K.

Funder

U.K. Engineering and Physical Research Council as Supergen Energy Networks Hub

U.K. Engineering and Physical Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/8782707/10402037/10547411.pdf?arnumber=10547411

Reference42 articles.

1. A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications

2. Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

3. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

4. An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

5. Analysis of performance and reliability of sub-kV SiC and GAN cascode power electronic devices;Gunaydin,2023

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