TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET-Reference-Cited by-同舟云学术

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TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET

Published:2024-08 Issue:8 Volume:71 Page:4596-4603
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen De-Xin¹,Wang Ying¹^ORCID,Song Yan-Xing¹,Zhang Wei²

Affiliation:

1. School of Information Science and Technology, Dalian Maritime University, Dalian, China

2. Beijing Institute of Astronautical Systems Engineering, Beijing, China

Funder

National Research and Development Program for Major Research Instruments of China

Basic Research Development Program of Liaoning Province of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10579934.pdf?arnumber=10579934

Reference34 articles.

1. Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications

2. High Power Medium Voltage Converters Enabled by High Voltage SiC Power Devices

3. State of the art and the future of wide band-gap devices;Kaminski

4. a DC-DC boost converter based on SiC MOSFET and SiC SBD

5. Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

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