Investigation on Performance for Silicon and GaAs Channel of Double-Gate MOSFETs
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-4495-8_29
Reference20 articles.
1. M.R. Beigh, 2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications, vol. 9 (2021)
2. N. Gowthaman, S. Member, Parametric analysis of CSDG MOSFET with La2 O3 gate oxide : based on electrical field estimation. IEEE Access 9, 159421–159431 (2021)
3. A. Maurya, K. Koley, S. Member, Investigation of single-event-transient effects induced by heavy-ion in all-silicon DG-TFET. IEEE Access 109357–109365 (2022)
4. N. Gowthaman, S. Member, Design of cylindrical surrounding double-gate MOSFET with fabrication steps using a layer-by-layer approach. IEEE Access 10(September), 116059–116068 (2022)
5. M.S. Islam, S. Hasan, Impact of channel thickness on the performance of GaAs and GaSb DG-JLMOSFETs: an atomistic tight binding based evaluation. IEEE Access 9, 117649–117659 (2021)
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