Impact of Diode Characteristics on 1.2 kV SiC MOSFET and Cascode JFET Efficiency: Body Diodes Vs SiC Schottky Barrier Diodes-Reference-Cited by-同舟云学术

Impact of Diode Characteristics on 1.2 kV SiC MOSFET and Cascode JFET Efficiency: Body Diodes Vs SiC Schottky Barrier Diodes

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Karout Mohammed Amer¹,Taha Mohamed²,Fisher Craig A.¹,Deb Arkadeep¹,Mawby Philip¹,Alatise Olayiwola¹

Affiliation:

1. School of Engineering, University of Warwick,Coventry,United Kingdom

2. Cairo University,The Faculty of Engineering

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131399.pdf?arnumber=10131399

Reference18 articles.

1. A Performance Comparison of SiC Power Modules with Schottky and Body Diodes;schmidt;PCIM Europe 2017 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2017

2. Performance Evaluation of Different Freewheeling Device Implementations for SiC MOSFETs with Kelvin Source Connections

3. Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules

4. Investigation and Comparison of SiC Freewheeling Diode for Switching Characteristics and Losses

5. Characterization and Optimization of SiC Freewheeling Diode for Switching Losses Minimization Over Wide Temperature Range;zhang;PCIM Europe 2017 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2017

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