Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules-Reference-Cited by-同舟云学术

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Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules

Published:2016-11 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Martin Daniel,Killeen Peter,Curbow W. Austin,Sparkman Brett,Kegley Lauren E.,McNutt Ty

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7784520/7799893/07799946.pdf?arnumber=7799946

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anti-Parallel SBDs Optimization for Loss Minimization of SiC Motor Drive Converters;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05

2. Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-10

3. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06

4. A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability;Energies;2023-05-28

5. Impact of Diode Characteristics on 1.2 kV SiC MOSFET and Cascode JFET Efficiency: Body Diodes Vs SiC Schottky Barrier Diodes;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

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