SiC MOSFET Active Gate Drive Circuit Based on Switching Transient Feedback

Abstract

Due to the influence of parasitic internal parameters and junction capacitance, the silicon carbide (SiC) power devices are frequently marred by significant overshoots in current and voltage, as well as high-frequency oscillations during the switching process. These phenomena can severely compromise the reliability of SiC-based power electronic converters during operation. This study delves into the switching transient of the SiC MOSFET with the goal of establishing a quantitative correlation between the gate driving current and the overshoot in both the drain-source voltage and the drain current. In light of these findings, the innovative active gate drive (AGD) circuit, which features an adjustable gate current, is introduced. Throughout the switching process, the AGD circuit employs a dynamic monitoring and feedback mechanism that is responsive to the gate voltage and rate of change in the drain-source voltage and drain current of the SiC MOSFET. This adjustment enables gate driving current to be actively modified, thereby effectively mitigating the occurrence of overshoots and oscillations. To empirically validate the efficacy of the proposed AGD circuit in curbing voltage and current overshoots and oscillations, a double-pulse experimental setup was meticulously constructed and tested.