Investigation and Comparison of SiC Freewheeling Diode for Switching Characteristics and Losses-Reference-Cited by-同舟云学术

Investigation and Comparison of SiC Freewheeling Diode for Switching Characteristics and Losses

Published:2021-12-15 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 2nd China International Youth Conference on Electrical Engineering (CIYCEE)
language:
Short-container-title:

Author:

Tang Ziyan,Xie Yue,Guan Jiajia,Chen Cai,Kang Yong

Funder

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9676696/9676713/09676909.pdf?arnumber=9676909

Reference7 articles.

1. Analysis of Switching Loss Reduction of SiC MOSFET in Presence of Antiparallel SiC Schottky Diode

2. Characterization and Optimization of SiC Freewheeling Diode for Switching Losses Minimization Over Wide Temperature Range;zhang;PCIM Europe 2017 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2017

3. Investigation on Ultralow Turn-off Losses Phenomenon for SiC MOSFETs With Improved Switching Model

4. Switching performance of a SiC MOSFET body diode and SiC schottky diodes at different temperatures

5. Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Diode Characteristics on 1.2 kV SiC MOSFET and Cascode JFET Efficiency: Body Diodes Vs SiC Schottky Barrier Diodes;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

2. A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification;IEEE Open Journal of Power Electronics;2023