A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification

Author:

Rogers Daniel J.1ORCID,Bruford Jack1ORCID,Ristic-Smith Aleksandar1ORCID,Ali Kawsar1ORCID,Palmer Patrick2ORCID,Shelton Edward1ORCID

Affiliation:

1. Department of Engineering Science, University of Oxford, Oxford, U.K.

2. School of Mechatronic Systems Engineering, Simon Fraser University, Surrey, BC, Canada

Funder

U.K. EPSRC

BorgWarner Inc.

Cambridge Design Partnership Ltd.

Ricardo Ltd.

YASA Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

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2. Characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs; characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs;marzoughi;Proc IEEE Energy Convers Congr Expo,0

3. Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic on-State Resistance

4. Tips and tricks on double pulse testing,2021

5. Power MOSFET basics understanding superjunction technology;siliconix,2015

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