Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO<sub>2</sub> Ferroelectric Thin Films-Reference-Cited by-同舟云学术

Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO₂ Ferroelectric Thin Films

Published:2023-09 Issue:9 Volume:44 Page:1476-1479
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Huang Teng¹,Li Yu-Chun¹,Chen Chu-Fan¹,Li Xiao-Xi¹,Gu Ze-Yu¹,Zhang David Wei¹,Zhu Xiao-Na¹^ORCID,Lu Hong-Liang¹^ORCID

Affiliation:

1. State Key Laboratory of ASIC and Systems, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shanghai Sailing Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10230308/10196667.pdf?arnumber=10196667

Reference25 articles.

1. Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

2. Ferroelectricity in yttrium-doped hafnium oxide

3. Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films

4. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

5. A review of Ga2O3materials, processing, and devices

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