Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material-Reference-Cited by-同舟云学术

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Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Published:2018-02-15 Issue:5 Volume:57 Page:2752-2765
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Schroeder Uwe¹^ORCID,Richter Claudia¹,Park Min Hyuk¹^ORCID,Schenk Tony¹^ORCID,Pešić Milan¹,Hoffmann Michael¹^ORCID,Fengler Franz P. G.¹,Pohl Darius²,Rellinghaus Bernd²,Zhou Chuanzhen³,Chung Ching-Chang³,Jones Jacob L.³,Mikolajick Thomas¹⁴^ORCID

Affiliation:

1. NaMLab gGmbH, Noethnitzer Straße 64, 01187 Dresden, Germany

2. IFW Dresden, Helmholtz Straße, Dresden, Germany

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, United States

4. Chair of Nanoelectronic Materials, TU Dresden, 01062 Dresden, Germany

Funder

Army Research Office

European Regional Development Fund

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

Alexander von Humboldt-Stiftung

Staat Saxony-Anhalt

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.7b03149

Reference53 articles.

1. Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

2. Ferroelectricity in hafnium oxide thin films

3. Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

4. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

5. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

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