Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System-Reference-Cited by-同舟云学术

Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Published:2017-08-22 Issue:10 Volume:3 Page:1700131
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Richter Claudia¹,Schenk Tony¹^ORCID,Park Min Hyuk¹^ORCID,Tscharntke Franziska A.¹,Grimley Everett D.²,LeBeau James M.²,Zhou Chuanzhen³,Fancher Chris M.²,Jones Jacob L.²,Mikolajick Thomas¹⁴^ORCID,Schroeder Uwe¹^ORCID

Affiliation:

1. NaMLab gGmbH Nöthnitzer Straße 64 01187 Dresden Germany

2. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695‐7907 USA

3. Analytical Instrumentation Facility College of Engineering at North Carolina State University Raleigh NC 27696 USA

4. Chair of Nanoelectronic Materials TU Dresden 01062 Dresden Germany

Funder

Army Research Office

Deutsche Forschungsgemeinschaft

Ministry of Education

National Science Foundation

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201700131

Reference58 articles.

1. Ferroelectricity in undoped hafnium oxide

2. Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

3. Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films

4. Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

5. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

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