A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance-Reference-Cited by-同舟云学术

A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance

Published:2023-07 Issue:7 Volume:44 Page:1088-1091
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ma Xiaoyang¹^ORCID,Deng Shan²^ORCID,Wu Juejian¹^ORCID,Zhao Zijian²^ORCID,Lehninger David³^ORCID,Ali Tarek⁴,Seidel Konrad³,De Sourav³^ORCID,He Xiyu¹^ORCID,Chen Yiming¹^ORCID,Yang Huazhong¹^ORCID,Narayanan Vijaykrishnan⁵^ORCID,Datta Suman⁶^ORCID,Kämpfe Thomas³^ORCID,Luo Qing⁷^ORCID,Ni Kai²^ORCID,Li Xueqing¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China

2. Department of Microsystems Engineering, Rochester Institute of Technology, Rochester, NY, USA

3. Center Nanoelectronic Technologies, Fraunhofer IPMS, Dresden, Germany

4. GlobalFoundries, Dresden, Germany

5. Department of Computer Science and Engineering, Penn State University, University Park, PA, USA

6. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

7. Institute of Microelectronics, Chinese Academy of Science, Beijing, China

Funder

NSFC

KDT Joint Undertaking under Grant Agreement

NSF

Tsinghua-Daimler Joint Institute for Sustainable Mobility

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10168002/10122209-aam.pdf

Reference20 articles.

1. SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic Applications

2. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

3. Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM

4. Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell

5. DNN+NeuroSim: An End-to-End Benchmarking Framework for Compute-in-Memory Accelerators with Versatile Device Technologies

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