Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM-Reference-Cited by-同舟云学术

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Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Chang Sou-Chi,Haratipour Nazila,Shivaraman Shriram,Brown-Heft Tobias L,Peck Jason,Lin Chia-Ching,Tung I-Cheng,Merrill Devin R,Liu Huiying,Lin Che-Yun,Hamzaoglu Fatih,Metz Matthew V,Young Ian A,Kavalieros Jack,Avci Uygar E

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372011.pdf?arnumber=9372011

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anti-Ferroelectric ZrO₂ Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM;IEEE Transactions on Electron Devices;2024-09

2. Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO₂–ZrO₂ ferroelectric films with different thicknesses;Nanotechnology;2024-06-24

3. Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing;ACS Applied Materials & Interfaces;2024-04-16

4. Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications;Applied Physics Reviews;2024-04-08

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