Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf0.5Zr0.5O2 Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Stress Effects of Interconnecting Metals on Back-End-of-Line Compatible Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors

Published:2023-04 Issue:4 Volume:44 Page:602-605
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jiang Pengfei¹^ORCID,Yang Yang¹,Wei Wei¹,Gong Tiancheng¹^ORCID,Wang Yuan¹^ORCID,Chen Yuting¹,Ding Yaxin¹^ORCID,Lv Shuxian¹^ORCID,Wang Boping¹,Chen Meiwen¹,Wang Yan¹,Luo Qing¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

Ministry of Science and Technology (MOST) of China

Strategic Priority Research Program of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10050514.pdf?arnumber=10050514

Reference25 articles.

1. TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

2. Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

3. Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

4. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

5. Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

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