Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering-Reference-Cited by-同舟云学术

Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

Published:2021-01-20 Issue:2 Volume:3 Page:629-638
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kashir Alireza¹^ORCID,Kim Hyungwoo¹,Oh Seungyeol¹,Hwang Hyunsang¹

Affiliation:

1. Center for Single Atom-based Semiconductor Device and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00671

Reference47 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Pathways towards ferroelectricity in hafnia

3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

4. Traversing Energy Landscapes Away from Equilibrium: Strategies for Accessing and Utilizing Metastable Phase Space

5. Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

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