Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study
Author:
Affiliation:
1. Department of Materials Science & Engineering, University of Connecticut, Storrs, Connecticut 06269, United States
2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
Funder
Army Research Office
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b11972
Reference37 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
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5. Local dielectric permittivity of HfO2 based slabs and stacks: A first principles study
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