Local dielectric permittivity of HfO2 based slabs and stacks: A first principles study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2822834
Reference25 articles.
1. High-κ Dielectric Materials for Microelectronics
2. High dielectric constant gate oxides for metal oxide Si transistors
3. Theoretical Evaluation of Zirconia and Hafnia as Gate Oxides for Si Microelectronics
4. Bonding and interface states ofSi:HfO2andSi:ZrO2interfaces
5. Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations
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