Bonding and interface states ofSi:HfO2andSi:ZrO2interfaces
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.075328/fulltext
Reference77 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High dielectric constant oxides
3. Thermodynamic stability of binary oxides in contact with silicon
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
5. Structure and stability of ultrathin zirconium oxide layers on Si(001)
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