Interface engineering through atomic dopants in HfO2-based gate stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4821797
Reference35 articles.
1. Recent progress in ab initio simulations of hafnia-based gate stacks
2. The theory of metal - ceramic interfaces
3. Ab initiostudy of decohesion properties in oxide/metal systems
4. High-Temperature Wetting and the Work of Adhesion in Metal/Oxide Systems
5. Pt effects in γ-Ni(Al)/α-Al2O3 adhesion
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