DFT based atomic modeling and Analog/RF analysis of ferroelectric HfO2 based improved FET device

Abstract

Abstract In this study, we systematically investigated the Analog/RF and linearity parameter of SM DGNCFET (single metal double gate negative capacitance field effect transistor) and DM DGNCFET (double metal double gate negative capacitance Field effect transistor) with the help of Cogenda Visual TCAD simulator, and also demonstrated the enhancement in the electronic and optical properties of Si-doping bulk structure by using the Quantum ATK. The analog parameters are enhanced for SM DGNCFET such better performance of switching ratio 279 times better, DIBL 54% lower, SS decay, and some other improved parameter transconductance, TGF and Radio frequency parameter is also enhanced, transconductance frequency product (TFP) for improving reliability and stability of device. Linearity parameters like that second and third order transconductance (gm2, g m3), voltage intercept point for 2nd, 3rd. Tran Blaha modified Becke Johnson (TB-mBJ) approxiamation gives the accurate band gap of crystal. In DFT based atomic study, 12.5% of Si doping in bulk structure reveals better results for ferroelectric HfO2 based crystal in the direct band gap of bandstructure is zero, Density of state (DOS) is also improved conductivity for Si doping crystal. Hence, Si doping in crystal structure is also better for conductivity.