Author:
Moselund K.E.,Bouvet D.,Pott V.,Meinen C.,Kayal M.,Ionescu A.M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Inadequacy of the classical theory of the MOS transistor operating in weak inversion;Van Overstraeten;IEEE Trans Electron Dev,1973
2. I-MOS: a novel semiconductor device with a subthreshold slope lower than kt/q, IEDM 2002;Gopalakrishnan;Tech Digest,2002
3. Double-gate tunnel FET with high-k gate dielectric;Boucart;IEEE Trans Electron Dev,2007
4. Abrupt current switching due to impact ionization effects in Ω-gate MOSFET on low doped bulk silicon, ESSDERC 2007;Moselund;Tech Dig,2007
5. Impact ionization MOS (I-MOS)-Part I: device and circuit simulations;Gopalakrishnan;IEEE Trans Electron Dev,2005
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