Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations-Reference-Cited by-同舟云学术

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Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations

Published:2005-01 Issue:1 Volume:52 Page:69-76
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Gopalakrishnan K.,Griffin P.B.,Plummer J.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/30008/01372710.pdf?arnumber=1372710

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