High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices

Author:

Kang Taeho12,Park Joonho3,Jung Hanggyo4,Choi Haeju12,Lee Sang‐Min12,Lee Nayeong12,Lee Ryong‐Gyu3,Kim Gahye5,Kim Seung‐Hwan6,Kim Hyung‐jun6,Yang Cheol‐Woong5,Jeon Jongwook7,Kim Yong‐Hoon3,Lee Sungjoo128ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 South Korea

2. Department of Nano Science and Technology Sungkyunkwan University Suwon 16419 South Korea

3. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 South Korea

4. Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 South Korea

5. Department of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 16419 South Korea

6. Center for Spintronics Korea Institute of Science and Technology/Hwarang‐ro 14‐gil Seongbuk‐gu Seoul 02792 South Korea

7. School of Electronic and Electrical Engineering Sungkyunkwan University Suwon 16419 South Korea

8. Department of Nano Engineering Sungkyunkwan University Suwon 16419 South Korea

Abstract

AbstractHerein, a high‐quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (Dit ≈ 5 × 1010 cm−2 eV−1). The chemically converted HfO2 exhibits dielectric constant, κ ≈ 23, resulting in low gate leakage current (≈10−3 A cm−2) at equivalent oxide thickness ≈0.5 nm. Density functional calculations indicate that the atomistic mechanism for achieving a high‐quality interface is the possibility of O atoms replacing the Se atoms of the interfacial HfSe2 layer without a substitution energy barrier, allowing layer‐by‐layer oxidation to proceed. The field‐effect‐transistor‐fabricated HfO2/HfSe2 gate stack demonstrates an almost ideal subthreshold slope (SS) of ≈61 mV dec−1 (over four orders of IDS) at room temperature (300 K), along with a high Ion/Ioff ratio of ≈108 and a small hysteresis of ≈10 mV. Furthermore, by utilizing a device architecture with separately controlled HfO2/HfSe2 gate stack and channel structures, an impact ionization field‐effect transistor is fabricated that exhibits n‐type steep‐switching characteristics with a SS value of 3.43 mV dec−1 at room temperature, overcoming the Boltzmann limit. These results provide a significant step toward the realization of post‐Si semiconducting devices for future energy‐efficient data‐centric computing electronics.

Funder

National Research Foundation of Korea

Publisher

Wiley

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3