An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
Author:
Affiliation:
1. Electrical and Computer Engineering Department, Purdue University, West Lafayette, Indiana 47907, USA
2. Micron Technology, 8000 S. Federal Way, Boise, Idaho 83706, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4918649
Reference23 articles.
1. In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
2. Irreversibility and Heat Generation in the Computing Process
3. Stability Constraints Define the Minimum Subthreshold Swing of a Negative Capacitance Field-Effect Transistor
4. Tunnel field-effect transistors as energy-efficient electronic switches
5. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
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