Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN
Author:
Affiliation:
1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
Funder
National Science and Technology Council of Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10508280/10472441.pdf?arnumber=10472441
Reference37 articles.
1. Neuro-Inspired Computing With Emerging Nonvolatile Memorys
2. Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
3. Improved Reliability for Back-End-of-Line Compatible Ferroelectric Capacitor With 3 Bits/Cell Storage Capability by Interface Engineering and Post Deposition Annealing
4. Wake-Up Free Ferroelectric Capacitor With Quadruple-Level Storage by Inserting ZrO2 Interlayer and Bottom Layer in HfZrOx
5. A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic application
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