Wake-Up Free Ferroelectric Capacitor With Quadruple-Level Storage by Inserting ZrO2 Interlayer and Bottom Layer in HfZrOx
Author:
Affiliation:
1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
2. Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
3. National Synchrotron Radiation Research Center, Hsinchu, Taiwan
Funder
National Science and Technology Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10053585/10013726.pdf?arnumber=10013726
Reference19 articles.
1. Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
2. Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers
3. Ferroelectricity in Simple Binary ZrO2 and HfO2
4. Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
5. Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improving the ferroelectric properties of Lu doped Hf0.5Zr0.5O2 thin films by capping a CeO x layer;Nanotechnology;2024-07-04
2. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications;Chip;2024-06
3. Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN;IEEE Transactions on Electron Devices;2024-05
4. Ferroelectric capacitors with triple level cell storage capability at low operating voltage by introducing TiN interlayer;Applied Physics Letters;2024-04-15
5. Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications;Applied Physics Reviews;2024-04-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3